Semiconductor Device Including a Conductive Feature Over an Active Region

ABSTRACT

A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.15/231,135, entitled “Semiconductor Device Including a ConductiveFeature Over an Active Region,” filed Aug. 8, 2016, which is adivisional of U.S. patent application Ser. No. 14/515,276, (now U.S.Pat. No. 9,412,700, issued Aug. 9, 2016) entitled “Semiconductor Deviceand Method of Manufacturing Semiconductor Device,” filed on Oct. 15,2014, which applications are hereby incorporated herein by reference.

BACKGROUND

The recent trend in miniaturizing integrated circuits (ICs) has resultedin smaller devices which consume less power yet provide morefunctionality at higher speeds. For one or more of these advantages tobe realized, various developments in IC design and/or manufacture areconsidered.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic cross-sectional view of a semiconductor device inaccordance with some embodiments.

FIG. 2A is a schematic cross-sectional view of a semiconductor device inaccordance with one or more embodiments.

FIG. 2B is a portion of a layout diagram of the semiconductor deviceshown in FIG. 2A in accordance with one or more embodiments.

FIG. 3A is a schematic cross-sectional view of a semiconductor device inaccordance with one or more embodiments.

FIG. 3B is a portion of a layout diagram of the semiconductor deviceshown in FIG. 3A in accordance with one or more embodiments.

FIG. 4A is a portion of a layout diagram of a semiconductor device inaccordance with one or more embodiments.

FIG. 4B is a schematic cross-sectional view of a portion of thesemiconductor device shown in FIG. 4A accordance with one or moreembodiments.

FIG. 5 is a flow chart of a method of manufacturing a semiconductordevice in accordance with some embodiments.

FIGS. 6A-6F are schematic cross-sectional views of the semiconductordevice of the method shown in FIG. 5 at various manufacturing stages inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. Further, when a firstelement is described as being “connected” or “coupled” to a secondelement, such description includes embodiments in which the first andsecond elements are directly connected or coupled to each other, andalso includes embodiments in which the first and second elements areindirectly connected or coupled to each other with one or more otherintervening elements in between.

FIG. 1 is a schematic cross-sectional view of a semiconductor device 100in accordance with some embodiments. The semiconductor device 100includes a substrate 102, an inter-layer dielectric (ILD) layer 106,gate structures 108 a, 108 b, 108 c and 108 d, a pair of first spacers110 a and 112 a, a pair of second spacers 110 b and 112 b, a pair ofthird spacers 110 c and 112 c, a pair of fourth spacers 110 d and 112 d,insulating layers 114 a, 114 b, 114 c and 114 d, first conductivefeatures 120, 122 and 124, silicided regions 126, a second conductivefeature 130, a third conductive feature 132 and ILD layer 134.

The semiconductor device 100 includes active elements and/or passiveelements. Examples of active elements include, but are not limited to,transistors and diodes. Examples of transistors include, but are notlimited to, metal oxide semiconductor field effect transistors (MOSFET),complementary metal oxide semiconductor (CMOS) transistors, bipolarjunction transistors (BJT), high voltage transistors, high frequencytransistors, p-channel and/or n-channel field effect transistors(PFETs/NFETs), etc.), FinFETs, and planar MOS transistors with raisedsource/drains. Examples of passive elements include, but are not limitedto, capacitors, inductors, fuses, and resistors. In the exampleconfiguration illustrated in FIG. 1, the semiconductor device 100 is aportion of a transistor. The source feature (not shown), the drainfeature (not shown), the channel feature (not shown) and the gatestructure (e.g., gate structure 108 a, 108 b, 108 c or 108 d) togetherdefine the transistor.

The substrate 102 comprises bulk silicon, a semiconductor wafer, asilicon-on-insulator (SOI) substrate, or a silicon germanium substrate.Other semiconductor materials including group III, group IV, and group Velements are within the scope of various embodiments.

The substrate 102 comprises an active region 104 a and one or moreisolation structures 104 b. The active region 104 a is isolated fromother elements of the semiconductor device 100 by one or more isolationstructures 104 b. The symbol 105 schematically illustrates that thedescribed structures (e.g., active region 104 a or isolation structure104 b) are arranged in various regions of semiconductor device 100 whichare not homogeneous throughout in one or more embodiments.

The active region 104 a is a doped region of the substrate 102 andincludes a source feature (not shown), a drain feature (not shown), anda channel feature (not shown) positioned between the source feature anddrain feature. Examples of materials of the active region 104 a include,but are not limited to, semiconductor materials doped with various typesof p-dopants and/or n-dopants. The active region 104 a is referred toherein as an oxide definition (OD) area or pattern.

The one or more isolation structures 104 b isolate the active region 104a from other portions of the semiconductor device 100. In someembodiments, the one or more isolation structures 104 b are embedded inthe substrate 102. In some embodiments, the one or more isolationstructures 104 b are over the substrate 102. In some embodiments, theone or more isolation structures 104 b are shallow trench isolation(STI) structures.

The ILD layer 106 is over the active region 104 a or the isolationstructure 104 b. The ILD layer 106 is also referred to herein as an ILD0layer,” i.e. inter-layer dielectric-zero (ILD0) layer.

Gate structures 108 a, 108 b, 108 c and 108 d are over a top surface ofa substrate 102. Gate structures 108 a and 108 b are over active region104 a. Gate structure 108 c is over symbol 105. In some embodiments,gate structure 108 c is over active region 104 a. In some embodiments,gate structure 108 c is over isolation structure 104 b. Gate structure108 d is over isolation structure 104 b. The illustrations shown in FIG.1 are exemplary, and the number of gate structures over the activeregion 104 a or the one or more isolation structures varies. In someembodiments, gate structures 108 a and 108 b are over a channel region(not shown). In some embodiments, the gate structures 108 a, 108 b, 108c and 108 d are referred to herein as a poly (PO) pattern and areschematically illustrated in the drawings with the label “PO.” Examplesof materials of gate structure 108 a, 108 b, 108 c or 108 d include, butare not limited to, metal and polysilicon. In some embodiments, gatestructure 108 a, 108 b, 108 c or 108 d comprises a dummy gate. In someembodiments, gate structure 108 a, 108 b, 108 c or 108 d comprises ametal gate. Gate structures 108 a, 108 b, 108 c and 108 d are adjacentwith each other. In some embodiments, an adjacent gate structure is agate structure within a predetermined distance of other gate structuresin the semiconductor device 100. In some embodiments, a portion of thegate structure 108 a is removed.

A pair of first spacers 110 a and 112 a is on opposite sidewalls of thegate structure 108 a. The pair of first spacers 110 a and 112 acomprises, for instance, a dielectric layer. A height of the firstspacer 110 a is less than the height of the first spacer 112 a. In someembodiments, the height of the first spacer 112 a is greater than theheight of the gate structure 108 a. In some embodiments, the top surfaceof the first sidewall spacer 110 a is not coplanar with the top surfaceof the first sidewall spacer 112 a.

A pair of second spacers 110 b and 112 b is on opposite sidewalls of thegate structure 108 b. The pair of second spacers 110 b and 112 bcomprises, for instance, a dielectric layer. In some embodiments, theheight of the second spacer 110 b or 112 b is greater than the height ofthe gate structure 108 b.

A pair of third spacers 110 c and 112 c is on opposite sidewalls of thegate structure 108 c. The pair of third spacers 110 c and 112 ccomprises, for instance, a dielectric layer. In some embodiments, theheight of the third spacer 110 c or 112 c is greater than the height ofthe gate structure 108 c.

A pair of fourth spacers 110 d and 112 d is on opposite sidewalls of thegate structure 108 d. The pair of fourth spacers 110 d and 112 dcomprises, for instance, a dielectric layer. In some embodiments, theheight of the fourth spacer 110 d or 112 d is greater than the height ofthe gate structure 108 d.

Insulating layer 114 a is over gate structure 108 a. In someembodiments, the height of insulating layer 114 a is substantially equalto the height of the first spacer 112 a. In some embodiments, the topsurface of insulating layer 114 a is substantially coplanar with the topsurface of the first spacer 112 a. In some embodiments, a portion of theinsulating layer 114 a is removed. In some embodiments, the insulatinglayer 114 a comprises a hard mask.

Insulating layer 114 b is over gate structure 108 b. In someembodiments, the height of insulating layer 114 b is substantially equalto the height of the second spacer 110 b or 112 b. In some embodiments,the top surface of insulating layer 114 b is substantially coplanar withthe top surface of the second spacer 110 b or 112 b. In someembodiments, a portion of the insulating layer 114 b is removed. In someembodiments, the insulating layer 114 b comprises a hard mask. In someembodiments, the insulating layer 114 b is embedded between the pair ofsecond spacers 110 b and 112 b.

Insulating layer 114 c is over gate structure 108 c. In someembodiments, the height of insulating layer 114 c is substantially equalto the height of the third spacer 110 c or 112 c. In some embodiments,the top surface of insulating layer 114 c is substantially coplanar withthe top surface of the third spacer 110 c or 112 c. In some embodiments,a portion of the insulating layer 114 c is removed. In some embodiments,the insulating layer 114 c comprises a hard mask. In some embodiments,the insulating layer 114 c is embedded between the pair of third spacers110 c and 112 c.

Insulating layer 114 d is over gate structure 108 d. In someembodiments, the height of insulating layer 114 d is substantially equalto the height of the fourth spacer 110 d or 112 d. In some embodiments,the top surface of insulating layer 114 d is substantially coplanar withthe top surface of the fourth spacer 110 d or 112 d. In someembodiments, a portion of the insulating layer 114 d is removed. In someembodiments, the insulating layer 114 d comprises a hard mask. In someembodiments, the insulating layer 114 d is embedded between the pair offourth spacers 110 d and 112 d.

First conductive feature 120, 122 or 124 is over semiconductor device100 to provide electrical connections to the semiconductor device 100.

First conductive feature 120 is embedded in the ILD layer 106 to provideelectrical connection to the gate structure 108 a and the correspondingexposed source/drain features (e.g., active region 104 a) of gatestructure 108 a or 108 b. In some embodiments, the top surface of thefirst conductive feature 120 is coplanar with a top surface of theinsulating layer 114 a, 114 b, 114 c or 114 d. In some embodiments, thefirst conductive feature 120 has a varied thickness. In someembodiments, the first conductive feature 120 has a tapered shape. Insome embodiments, the first conductive feature 120 has an L-shape.

First conductive feature 122 is embedded in the ILD layer 106 to provideelectrical connection to the exposed source/drain features (e.g., activeregion 104 a) of gate structure 108 b or 108 c. In some embodiments, thetop surface of the first conductive feature 122 is coplanar with a topsurface of the insulating layer 114 a, 114 b, 114 c or 114 d. Firstconductive features 120, 122 and 124 are over the active region 104 a,and belong to a lower conductive layer referred to herein as MD1 layeror pattern. The MD1 layer is a metal-zero-over-oxide layer and isschematically illustrated in the drawings with the label “MD1.”

First conductive feature 124 extends at least partially into theisolation structure 104 b. First conductive feature 124 is over theisolation structure 104 b, and belongs to a lower conductive layerreferred to herein as MD1 layer or pattern. In some embodiments, the topsurface of the first conductive feature 124 is coplanar with a topsurface of the insulating layer 114 a, 114 b, 114 c or 114 d. In someembodiments, first conductive feature 124 is embedded in the isolationstructure 104 b.

Silicided regions 126 are between the first conductive features 120 and122 and the top surface of the active region 104 a (e.g., source/drainfeatures) of semiconductor device 100.

Second conductive feature 130 is over and electrically coupled to thecorresponding first conductive feature 120. Second conductive feature130 is referred to herein as a metal-zero-over-polysilicon (MP) layer orpattern and is schematically illustrated in the drawings with the label“MP.” In some embodiments, the second conductive feature 130 is indirect electrical contact with the gate structure 108 a. In someembodiments, the second conductive feature 130 is in direct electricalcontact with the corresponding first conductive feature 120. Theillustrations shown in FIG. 1 are exemplary, and the number of secondconductive features 130 varies. In some embodiments, second conductivefeature 130 is electrically connected to more than one first conductivefeature. In some embodiments, the top surface of the first conductivefeature 120 is coplanar with the top surface of the second conductivefeature 130. In some embodiments, the second conductive feature 130 hasa varied thickness. In some embodiments, the second conductive feature130 has a tapered shape. In some embodiments, the second conductivefeature 130 has an L-shape. In some embodiments, the second conductivefeature 130 has a U-shape. In some embodiments, a portion of the secondconductive feature 130 is embedded in the first conductive feature 120.In some embodiments, a material of the second conductive feature 130 issubstantially similar to the material of the first conductive feature120. In some embodiments, a portion of the second conductive feature 130is embedded between the first conductive feature 120, the gate structure108 a and the pair of first spacers 110 a and 112 a. In someembodiments, the second conductive feature 130 is directly on the firstspacer 110 a. In some embodiments, the second conductive feature 130 iselectrically connected to the gate structure 108 a.

Third conductive feature 132 is over first conductive features 120, 122and 124, and second conductive feature 130. Third conductive feature 132is embedded in ILD layer 134. Third conductive feature 132 belongs to anupper conductive layer referred to herein as MD2 layer or pattern. TheMD2 layer is also a metal-zero-over-oxide layer and is schematicallyillustrated in the drawings with the label “MD2.”

Third conductive feature 132 is over the gate structures 108 a, 108 b,108 c and 108 d. In some embodiments, third conductive feature 132 iselectrically coupled to the source/drain of gate structure 108 b or 108c by first conductive feature 122. In some embodiments, third conductivefeature 132 is configured to provide an electrical connection to thefirst conductive features 120 and 122 or the second conductive feature130. In some embodiments, third conductive feature 132 is configured toprovide an electrical connection to the active region 104 a of thesemiconductor device 100. In some embodiments, third conductive feature132 is configured to provide an electrical connection to one or moreisolation regions (e.g., isolation structure 104 b) of the semiconductordevice 100.

In some embodiments, third conductive feature 132 is electricallycoupled to first conductive features 122 or 124. In some embodiments,insulating layers 114 b, 114 c and 114 d electrically insulate thecorresponding gate structures 108 b, 108 c and 108 d from the thirdconductive feature 132. In some embodiments, third conductive feature132 is over the active region 104 a. In some embodiments, thirdconductive feature 132 is over the isolation structure 104 b. Theillustrations shown in FIG. 1 are exemplary, and the number of thirdconductive features 132 varies. In some embodiments, third conductivefeature 132 is electrically connected to one or more of the firstconductive features 120, 122 and 124. In some embodiments, thirdconductive feature 132 is electrically connected to one or more secondconductive features 130. In some embodiments, third conductive feature132 is electrically connected to other layers (not shown) in thesemiconductor device 100. In some embodiments, the second conductivefeature 130 is configured to provide a larger contact area to the gatestructure 108 a when compared with similar conductive featurespositioned above the gate structure 108 a.

The ILD layer 134 is over the ILD layer 106. The ILD layer 134 is alsoreferred to herein as an “ILD1 layer,” i.e. inter-layer dielectric-one(ILD1) layer.

The MP, MD1 and MD2 layers are independently chosen from conductivematerials and belong to a first (i.e., lowermost) conductive materiallayer over the substrate 102 referred to herein as “MO layer,” i.e.,metal-zero (MO) layer, which is the lowermost metal layer of thesemiconductor device 100. In some embodiments, the MP, MD1 and MD2layers are metal and belong to first metal layer MO. The MO layer isschematically illustrated in the drawings with the label “MO.” In atleast one embodiment, the MO layer is formed in two steps. For example,in a first step, the lower portion, i.e., the top surface of the MD1 andMP layers, are substantially coplanar with the insulating layers 114 a.114 b, 114 c and 114 d. In a second step, the upper portion, i.e., theMD2 layer, is formed over the corresponding MD1 and MP layers and gatestructures 108 a, 108 b, 108 c and 108 d. In some embodiments, the MOlayer is referred to as the local interconnect layer.

In some embodiments, one or more of the MD1, MP and MD2 layers provideelectrical connections between various elements of the semiconductordevice 100 and/or between one or more elements of the semiconductordevice 100 and external circuitry. The above-described structure is anexample configuration, and other arrangements of electrical connectionsamong elements of the semiconductor device 100 are contemplated invarious embodiments. For example, in one or more embodiments, one ormore via layers (not shown) are over and connected to the MO layer. Insome embodiments, the one or more via layers (not shown) provideelectrical connection to further metal layers (not shown) over the M0layer.

FIG. 2A is a schematic cross-sectional view of a semiconductor device200 in accordance with one or more embodiments. Semiconductor device 200is an embodiment of semiconductor device 100 shown in FIG. 1 withsimilar elements. As shown in FIG. 2A, similar elements have a samereference number as shown in FIG. 1. In comparison with FIG. 1, thesemiconductor device 200 of FIG. 2A does not include isolation structure104 b, ILD 106, gate structure 108 d, pair of fourth spacers 110 d and112 d, insulating layers 114 b and 114 d, first conductive feature 124,second conductive feature 130 and third conductive feature 132.

In comparison with FIG. 1, the semiconductor device 200 comprises atransistor 201 and a second conductive feature 230. Second conductivefeature 230 is an embodiment of second conductive feature 130 shown inFIG. 1. First conductive feature 220 is an embodiment of firstconductive feature 120 shown in FIG. 1. First spacer 210 a is anembodiment of first spacer 110 a shown in FIG. 1. Second spacer 212 b isan embodiment of second spacer 112 b shown in FIG. 1.

Transistor 201 comprises active region 104 a (which includes a sourcefeature (not shown), a drain feature (not shown), and a channel region(not shown)) and a gate structure 108 b.

In comparison with FIG. 1, the second conductive feature 230 iselectrically connected to the gate structure 108 b. Second conductivefeature 230 is electrically coupled to the corresponding firstconductive feature 220. In some embodiments, the second conductivefeature 230 is in direct contact with the gate structure 108 b. WhileFIG. 2A does not show an insulating layer 114 b over the gate structure108 b, other embodiments exist where a portion of the insulating layer114 b is over the gate structure 108 b, and the second conductivefeature 230 is in direct contact with the top surface of the gatestructure 108 b and the remaining portion of the insulating layer 114 b.In some embodiments, the second conductive feature 230 is in directelectrical contact with the corresponding first conductive feature 220.In some embodiments, the top surface of the first conductive feature 220is coplanar with the top surface of the second conductive feature 230.In some embodiments, the second conductive feature 230 has a taperedshape. In some embodiments, the second conductive feature 230 has anL-shape. In some embodiments, the second conductive feature 230 has aU-shape. In some embodiments, a portion of the second conductive feature230 is embedded in the first conductive feature 220. In someembodiments, a portion of the second conductive feature 230 ispositioned between the first conductive feature 220, the gate structure108 b and the pair of second spacers 210 b and 212 b. In someembodiments, a portion of the second conductive feature 230 is embeddedin the first conductive feature 220, the gate structure 108 b and thepair of second spacers 210 b and 212 b.

In some embodiments, the second conductive feature 230 is directly onthe second spacer 212 b. In some embodiments, the height of the secondspacer 110 b with respect to the top of substrate 102 is greater thanthe height of the second spacer 212 b with respect to the top ofsubstrate 102. In some embodiments, the height of the first spacer 210 awith respect to the top of substrate 102 is substantially equal to theheight of the first spacer 112 a with respect to the top of substrate102. In some embodiments, the second conductive feature 230 isconfigured to provide a larger contact area to the gate structure 108 bwhen compared with similar conductive features positioned above the gatestructure 108 b. In some embodiments, a material of the secondconductive feature 230 is substantially similar to the material of thefirst conductive feature 220.

FIG. 2B is a portion of a layout diagram 200′ of the semiconductordevice shown in FIG. 2A in accordance with one or more embodiments. Thelayout diagram 200′ of FIG. 2B is a top-view of a portion of thesemiconductor device shown in FIG. 2A, and includes similar elementshaving a same reference number as shown in FIG. 2A. One or more of thelayout patterns described herein are usable to prepare a set of masksusable for manufacturing a memory cell in an integrated circuit. Thelayout diagram 200′ of semiconductor device 200 is a basis to bemodified to form other layout structures, such as those describedherein, e.g., FIGS. 3B and 4.

Layout diagram 200′ includes active region 104 a, gate structures 108 a,108 b and 108 c, first conductive features 122 and 220, isolation region204, second conductive feature 230 and power rail 202. Isolation region204 is an embodiment of isolation structure 104 b shown in FIG. 1.

The active region 104 a extends continuously in the width direction(i.e., in the horizontal direction of FIG. 2B). Active region 104 acomprises drain feature D and source feature S. Active region 104 a iselectrically isolated from the power rail 202 by isolation region 204.

The gate structures 108 a, 108 b and 108 c extend continuously in theheight direction (i.e., in the vertical direction of FIG. 2B). The gatestructures 108 a, 108 b and 108 c extend over the active region 104 aand across the isolation structure 204. The gate structures 108 a, 108 band 108 c are electrically isolated from each other by isolation region204.

The power rail 202 extends in the width direction (i.e., in thehorizontal direction of FIG. 2B). In some embodiments, the power rail202 is configured to provide electrical power to the semiconductordevice 200.

Transistor device 201 comprises gate structure 108 b, source feature Sand drain feature D. The first conductive feature 122 (e.g., MD1) iselectrically connected to the drain feature D of the transistor device201. The first conductive feature 220 (e.g., MD1) is electricallyconnected to the source feature S of the transistor device 201. The gatestructure 108 b is electrically connected to the source feature S of thetransistor device 201 by second conductive feature 230 (e.g., MP) andfirst conductive feature 220 (e.g., MD1). In some embodiments, the gatestructure 108 b is directly connected to the second conductive feature230 (e.g., MP). In some embodiments, the second conductive feature 230(e.g., MP) is directly connected to the first conductive feature 220(e.g., MD1). In some embodiments, the first conductive feature 220(e.g., MD1) is connected to the source feature S.

FIG. 3A is a schematic cross-sectional view of a semiconductor device300 in accordance with one or more embodiments. Semiconductor device 300is an embodiment of semiconductor device 200 shown in FIG. 2A withsimilar elements. As shown in FIG. 3A, similar elements have a samereference number as shown in FIG. 2A.

In comparison with FIG. 1, the semiconductor device 200 comprises atransistor 301, a second conductive feature 230 and second spacer 310 b.Second conductive feature 330 is an embodiment of second conductivefeature 230 shown in FIG. 2A. Second spacer 310 b is an embodiment offirst spacer 110 a shown in FIG. 2A.

Transistor 301 comprises active region 104 a (which includes a sourcefeature (not shown), a drain feature (not shown), and a channel region(not shown)) and a gate structure 108 b.

The second conductive feature 230 is electrically connected to the gatestructure 108 b. Second conductive feature 230 is electrically coupledto the corresponding first conductive features 220 and 322. In someembodiments, the second conductive feature 330 is in direct contact withthe gate structure 108 b. In some embodiments, the second conductivefeature 330 is in direct electrical contact with the corresponding firstconductive features 220 and 322. In some embodiments, the top surface ofthe first conductive feature 220 or 322 is coplanar with the top surfaceof the second conductive feature 330. In some embodiments, the secondconductive feature 330 has a tapered shape. In some embodiments, thesecond conductive feature 330 has an L-shape. In some embodiments, thesecond conductive feature 330 has a U-shape. In some embodiments, aportion of the second conductive feature 330 is embedded in the firstconductive feature 220 or 322. In some embodiments, a portion of thesecond conductive feature 330 is positioned between the first conductivefeature 220, the gate structure 108 b, the pair of second spacers 310 band 212 b and the first conductive feature 322. In some embodiments, aportion of the second conductive feature 330 is embedded in the firstconductive feature 220 or 322, the gate structure 108 b and the pair ofsecond spacers 310 b and 212 b. In some embodiments, the secondconductive feature 330 is directly on the second spacer 212 b or 310 b.In some embodiments, the height of the second spacer 310 b issubstantially equal to the height of the second spacer 212 b. In someembodiments, the second conductive feature 330 is configured to providea larger contact area to the gate structure 108 b when compared withsimilar conductive features positioned above the gate structure 108 b.In some embodiments, a material of the second conductive feature 330 issubstantially similar to the material of the first conductive feature220 or 322.

FIG. 3B is a portion of a layout diagram 300′ of the semiconductordevice shown in FIG. 3A in accordance with one or more embodiments. Thelayout diagram 300′ of FIG. 3B is a top-view of a portion of thesemiconductor device shown in FIG. 3A. The layout diagram 300′ of FIG.3B is a top-view of a portion of the semiconductor device shown in FIG.3A, and includes similar elements having a same reference number asshown in FIG. 3A. One or more of the layout patterns described hereinare usable to prepare a set of masks usable for manufacturing a memorycell in an integrated circuit. The layout diagram 300′ of semiconductordevice 300 is a basis to be modified to form other layout structures,such as those described herein, e.g., FIGS. 2B and 4.

Layout diagram 300′ is an embodiment of layout diagram 200′ shown inFIG. 2B with similar elements. As shown in FIG. 3B, similar elementshave a same reference number as shown in FIG. 2B.

Layout diagram 300′ includes active region 104 a, gate structures 108 a,108 b and 108 c, first conductive features 322 and 220, isolation region204, second conductive feature 330. Isolation region 204 is anembodiment of isolation structure 104 b shown in FIG. 1.

The active region 104 a extends continuously in the width direction(i.e., in the horizontal direction of FIG. 3B). Active region 104 acomprises drain feature D and source feature S. Active region 104 a iselectrically isolated from other portions of semiconductor device 300 byisolation region 204.

The gate structures 108 a, 108 b and 108 c extend continuously in theheight direction (i.e., in the vertical direction of FIG. 3B). The gatestructures 108 a, 108 b and 108 c extend over the active region 104 aand across the isolation structure 204. The gate structures 108 a, 108 band 108 c are electrically isolated from each other by isolation region204.

Transistor device 301 comprises gate structure 108 b, source feature Sand drain feature D. The first conductive feature 322 (e.g., MD1) iselectrically connected to the drain feature D of the transistor device201. The gate structure 108 b is electrically connected to the drainfeature D of the transistor device 301 by second conductive feature 330(e.g., MP) and first conductive feature 322 (e.g., MD1). In someembodiments, the gate structure 108 b is directly connected to thesecond conductive feature 330 (e.g., MP). In some embodiments, thesecond conductive feature 330 (e.g., MP) is directly connected to thefirst conductive feature 322 (e.g., MD1). In some embodiments, the firstconductive feature 322 (e.g., MD1) is connected to the drain feature D.

The first conductive feature 220 (e.g., MD1) is electrically connectedto the source feature S of the transistor device 301. The gate structure108 b is electrically connected to the source feature S of thetransistor device 301 by second conductive feature 330 (e.g., MP) andfirst conductive feature 220 (e.g., MD1). In some embodiments, thesecond conductive feature 330 (e.g., MP) is directly connected to thefirst conductive feature 220 (e.g., MD1). In some embodiments, the firstconductive feature 220 (e.g., MD1) is connected to the source feature S.

FIG. 4A is a portion of a layout diagram 400 of a semiconductor devicein accordance with one or more embodiments. The layout diagram 400 ofFIG. 4A is an embodiment of the layout diagram 200′ shown in FIG. 2B. Asshown in FIG. 4A, similar elements have a same reference number as shownin FIG. 2B. One or more of the layout patterns described herein areusable to prepare a set of masks usable for manufacturing a memory cellin an integrated circuit. The layout diagram 400 of the semiconductordevice is a basis to be modified to form other layout structures, suchas those described herein, e.g., FIGS. 2B, 3B and 6A-6F.

Layout diagram 400 includes active regions 404 a and 404 b, gatestructures 408 a, 408 b, 408 c and 408 d, isolation region 404, secondconductive feature 430 and third conductive features 432 a and 432 b.

Active regions 404 a and 404 b are an embodiment of active region 104 ashown in FIG. 2B. Gate structures 408 a, 408 b, 408 c and 408 d are anembodiment of gate structures 108 a, 108 b, 108 c and 108 d shown inFIG. 1. Isolation region 404 is an embodiment of isolation structure 104b shown in FIG. 1. Second conductive feature 430 is an embodiment ofsecond conductive feature 130 shown in FIG. 1. Third conductive features432 a and 432 b are an embodiment of third conductive feature 132 shownin FIG. 1.

Active regions 404 a and 404 b extend in the width direction (i.e., inthe horizontal direction of FIG. 4A). Active region 404 a iselectrically isolated from the active region 404 b by isolation region404. In some embodiments, active regions 404 a and 404 b include p or ndoped materials.

The gate structures 408 a, 408 b, 408 c and 408 d extend in the heightdirection (i.e., in the vertical direction of FIG. 4A). The gatestructures 408 a, 408 b, 408 c and 408 d extend over the active regions404 a and 404 b, and across the isolation structure 404. The gatestructures 408 a, 408 b, 408 c and 408 d are electrically isolated fromeach other by isolation region 404.

The second conductive feature 430 (e.g., MP) extends in the widthdirection (i.e., in the horizontal direction of FIG. 4A). In someembodiments, second conductive feature 430 (e.g., MP) is electricallyconnected to the gate structure 408 c. In some embodiments, secondconductive feature 430 (e.g., MP) is directly connected to the gatestructure 408 c. In some embodiments, second conductive feature 430(e.g., MP) is arranged to extend across isolation region 404.

The third conductive feature 432 a (e.g., MD2) extends in the widthdirection (i.e., in the horizontal direction of FIG. 4A). In someembodiments, third conductive feature 432 a (e.g., MD2) is electricallyconnected to the source/drain features (e.g., active region 404 a) ofthe gate structure 408 c.

In some embodiments, third conductive feature 432 a (e.g., MD2) extendsacross active regions 404 a and 404 b. In some embodiments, thirdconductive feature 432 a (e.g., MD2) is arranged to extend over activeregion 404 a without being electrically connected to the gate structure408 c.

The third conductive feature 432 b (e.g., MD2) extends in the heightdirection (i.e., in the vertical direction of FIG. 4A). In someembodiments, third conductive feature 432 b (e.g., MD2) is electricallyconnected to the source/drain feature (e.g., active region 404 a) andthe source/drain feature (e.g., active region 404 b). In someembodiments, third conductive feature 432 b (e.g., MD2) is arranged toextend across isolation region 404.

FIG. 4B is a schematic cross-sectional view of a portion of thesemiconductor device 400′ shown in FIG. 4A in accordance with one ormore embodiments. The schematic cross-sectional diagram 400′ of FIG. 4Bis a cross-sectional view of a portion of the layout 400 shown in FIG.4A, and includes similar elements having a same reference number asshown in FIG. 4A. Semiconductor device 400′ is an embodiment ofsemiconductor device 100 shown in FIG. 1 with similar elements. As shownin FIG. 4B, similar elements have a same reference number as shown inFIG. 1.

Third conductive feature 432 a (e.g., MD2) is over gate structure 408 c,insulating layer 414 c and first conductive features 122 and 124 (e.g.,MD1). As shown in FIG. 4B, third conductive feature 432 a (e.g., MD2) isarranged to extend over active region 404 a without being electricallyconnected to the gate structure 408 c. As shown in FIG. 4B, thirdconductive feature 432 a (e.g., MD2) is electrically isolated from thegate structure 408 c by insulating layer 414 c. As shown in FIG. 4B,third conductive feature 432 a (e.g., MD2) is electrically connected tofirst conductive features 122 and 124 (e.g., MD1), without beingelectrically connected to the gate structure 408 c.

FIG. 5 is a flow chart of a method 500 of manufacturing a semiconductordevice 600F (shown in FIG. 6F), in accordance with some embodiments.FIGS. 6A-6F are schematic cross-sectional views of the semiconductordevice 600F at various manufacturing stages, in accordance with someembodiments. Semiconductor device 600F is an embodiment of semiconductordevice 100 shown in FIG. 1 with similar elements. As shown in FIGS.6A-6F, similar elements have a same reference number as shown in FIG. 1.

One or more effects discussed herein with respect to FIGS. 1-4 is/areobtainable in the manufacturing method 500 in accordance with someembodiments.

At operation 502 of the method 500, an active region 104 a is formed ina substrate 102. The substrate 102 comprises, in at least oneembodiment, a silicon substrate. The substrate 102 comprises, in atleast one embodiment, silicon germanium (SiGe), Gallium arsenic, orother suitable semiconductor materials. In at least one embodiment, theisolation structures 104 b (e.g., shallow trench isolation (STI)regions) are formed in the substrate 102 for isolating active area 104 ain the substrate 102. Example materials of the STI regions 104 binclude, but are not limited to, silicon oxide, silicon nitride, siliconoxynitride, fluoride-doped silicate, and/or any other low k dielectricmaterials. In some embodiments, the substrate 102 further includes oneor more other features, such as various doped regions, a buried layer,and/or an epitaxy (epi) layer. In some embodiments, the substrate 102comprises a semiconductor on insulator, such as silicon on insulator(SOI). In some embodiments, the substrate 102 includes a doped epilayer, a gradient semiconductor layer, and/or a semiconductor layeroverlying another semiconductor layer of a different type such as asilicon layer on a silicon germanium layer. In some embodiments,operation 502 is optional, where a semiconductor device having an activeregion is already formed.

At operation 504 of the method 500, at least a first gate structure 108a and a second gate structure 108 b are formed on the substrate 102. Insome embodiments, in operation 504, a first gate structure 108 a, asecond gate structure 108 b, a third gate structure 108 c and a fourthgate structure 108 d are formed on the substrate 102 (as shown in FIG.6A).

In some embodiments, the gate structures 108 a, 108 b, 108 c and 108 dare formed over the substrate 102 including a gate dielectric (notshown) on the substrate 102. Example materials of the gate dielectricinclude, but are not limited to, a high-k dielectric layer, aninterfacial layer, and/or combinations thereof. Example materials forthe high-k dielectric layer include, but are not limited to, siliconnitride, silicon oxynitride, hafnium oxide (HfO₂), hafnium silicon oxide(HfSiO), hafnium silicon oxynitride (HfSiON), hafnium tantalum oxide(HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide(HfZrO), metal oxides, metal nitrides, metal silicates, transitionmetal-oxides, transition metal-nitrides, transition metal-silicates,oxynitrides of metals, metal aluminates, zirconium silicate, zirconiumaluminate, zirconium oxide, titanium oxide, aluminum oxide, hafniumdioxide-alumina (HfO₂—Al₂O₃) alloy, other suitable high-k dielectricmaterials, and/or combinations thereof. The thickness of the high-kdielectric layer is in the range of, for instance, about 5 angstroms (Å)to about 40 Å. In some embodiments, the gate dielectric is formed overthe substrate 102 by atomic layer deposition (ALD) or other suitabletechniques.

In some embodiments, the gate structures 108 a, 108 b, 108 c and 108 dfurther include a gate electrode (not shown) formed over the gatedielectric (not shown). The thickness of the gate electrode ranges, forinstance, from about 10 to about 500 Å. The gate electrode is formed ofpoly-silicon or metal. In one or more embodiments, the gate electrodecomprises Al, AlTi, Ti, TiN, TaN, Ta, TaC, TaSiN, W, WN, MoN, and/orother suitable conductive materials. In some embodiments, the gateelectrode is formed by chemical vapor deposition (CVD), physical vapordeposition (PVD or sputtering), plating, atomic layer deposition (ALD),and/or other suitable processes.

At operation 506 of the method 500, an insulating layer (e.g., shown inFIG. 5A as insulating layer 114 a and 114 b) is formed on at least afirst gate structure 108 a and a second gate structure 108 b. In someembodiments, in operation 506, an insulating layer (e.g., shown in FIG.5A as insulating layer 114 a, 114 b, 114 c and 114 d) is formed on gatestructures 108 a, 108 b, 108 c and 108 d. In some embodiments,insulating layer 114 a, 114 b, 114 c and 114 d comprises a hard mask521. In some embodiments, the insulating layer 114 a, 114 b, 114 c and114 d includes silicon nitride, silicon oxynitride, silicon carbide orother suitable materials. In some embodiments, the insulating layer 114a, 114 b, 114 c and 114 d is formed, in at least one embodiment, by adeposition process or any suitable methods, and used as a mask topattern the gate structures 108 a, 108 b, 108 c and 108 d.

At operation 508 of the method 500, a pair of spacers (e.g., pair offirst spacers 110 a and 112 a, pair of second spacers 110 b and 112 b,pair of third spacers 110 c and 112 c and pair of fourth spacers 110 dand 112 d) are formed on each sidewall of the gate structures (e.g.,first gate structure 108 a, second gate structure 108 b, gate structures108 c and 108 d).

The pair of spacers (e.g., pair of first spacers 110 a and 112 a, pairof second spacers 110 b and 112 b, pair of third spacers 110 c and 112 cand pair of fourth spacers 110 d and 112 d) are formed on sidewalls ofthe gate structures (e.g., first gate structure 108 a, second gatestructure 108 b, gate structures 108 c and 108 d). The pair of spacers(e.g., pair of first spacers 110 a and 112 a, pair of second spacers 110b and 112 b, pair of third spacers 110 c and 112 c and pair of fourthspacers 110 d and 112 d) comprises, for instance, a dielectric layer. Inone or more embodiments, the pair of spacers (e.g., pair of firstspacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair ofthird spacers 110 c and 112 c and pair of fourth spacers 110 d and 112d) is formed of silicon nitride. In some embodiments, the pair ofspacers (e.g., pair of first spacers 110 a and 112 a, pair of secondspacers 110 b and 112 b, pair of third spacers 110 c and 112 c and pairof fourth spacers 110 d and 112 d) includes oxynitride. In someembodiments, the pair of spacers (e.g., pair of first spacers 110 a and112 a, pair of second spacers 110 b and 112 b, pair of third spacers 110c and 112 c and pair of fourth spacers 110 d and 112 d) is formed ofsilicon carbide. In some embodiments, the pair of spacers (e.g., pair offirst spacers 110 a and 112 a, pair of second spacers 110 b and 112 b,pair of third spacers 110 c and 112 c and pair of fourth spacers 110 dand 112 d) contains an impurity, such as boron, carbon, fluorine, orcombinations thereof. In some embodiments, the pair of spacers (e.g.,pair of first spacers 110 a and 112 a, pair of second spacers 110 b and112 b, pair of third spacers 110 c and 112 c and pair of fourth spacers110 d and 112 d) is formed by suitable methods. First, a layer for thepair of spacers (e.g., pair of first spacers 110 a and 112 a, pair ofsecond spacers 110 b and 112 b, pair of third spacers 110 c and 112 cand pair of fourth spacers 110 d and 112 d) is deposited over the gatestructure (e.g., first gate structure 108 a, second gate structure 108b, gate structures 108 c and 108 d) and the substrate 102, for example,by plasma enhanced chemical vapor deposition (PECVD), low-pressurechemical vapor deposition (LPCVD), sub-atmospheric chemical vapordeposition (SACVD), atomic layer deposition (ALD), and the like. Thelayer for the pair of spacers (e.g., pair of first spacers 110 a and 112a, pair of second spacers 110 b and 112 b, pair of third spacers 110 cand 112 c and pair of fourth spacers 110 d and 112 d) is formed to havea suitable thickness, e.g., in the range of about 50 Å to about 400 Å.Further, the deposited layer for the pair of spacers (e.g., pair offirst spacers 110 a and 112 a, pair of second spacers 110 b and 112 b,pair of third spacers 110 c and 112 c and pair of fourth spacers 110 dand 112 d) is patterned to form the pair of spacers (e.g., pair of firstspacers 110 a and 112 a, pair of second spacers 110 b and 112 b, pair ofthird spacers 110 c and 112 c and pair of fourth spacers 110 d and 112d) in contact or adjacent to the sidewalls of the gate structure (e.g.,first gate structure 108 a, second gate structure 108 b, gate structures108 c and 108 d). The patterning is performed, in at least oneembodiment, by suitable techniques, such as a wet etch process, a dryetch process, or combinations thereof. In one or more embodiments, thepatterning to form the pair of spacers (e.g., pair of first spacers 110a and 112 a, pair of second spacers 110 b and 112 b, pair of thirdspacers 110 c and 112 c and pair of fourth spacers 110 d and 112 d) isconducted by an anisotropic dry etching process.

The above description where the gate structure (e.g., first gatestructure 108 a, second gate structure 108 b, gate structures 108 c and108 d) is formed before the spacer (e.g., pair of first spacers 110 aand 112 a, pair of second spacers 110 b and 112 b, pair of third spacers110 c and 112 c and pair of fourth spacers 110 d and 112 d) is referredto as a gate-first process. In an alternative, gate-last process, thesame or similar steps of the gate-first process is performed to form adummy gate, e.g., dummy poly-silicon, and the spacer (e.g., pair offirst spacers 110 a and 112 a, pair of second spacers 110 b and 112 b,pair of third spacers 110 c and 112 c and pair of fourth spacers 110 dand 112 d). The dummy gate is replaced afterwards with a suitable metalor conductive material to obtain the gate structure (e.g., first gatestructure 108 a, second gate structure 108 b, gate structures 108 c and108 d).

Further, source and drain features are formed in an active area 104 a ofthe 3substrate 102 by using the gate structure (e.g., first gatestructure 108 a, second gate structure 108 b, gate structures 108 c and108 d) and the spacer (e.g., pair of first spacers 110 a and 112 a, pairof second spacers 110 b and 112 b, pair of third spacers 110 c and 112 cand pair of fourth spacers 110 d and 112 d) as a mask. Thus, the activearea 104 a includes the gate structure (e.g., first gate structure 108a, second gate structure 108 b, gate structures 108 c and 108 d) and thesource and drain features adjacent the gate structure (e.g., first gatestructure 108 a, second gate structure 108 b, gate structures 108 c and108 d). For example, the formation of the source/drain features isperformed by an ion implantation or a diffusion process. Depending onthe type of the semiconductor device, the source/drain features aredoped with p-type dopants, such as boron or BF₂, n-type dopants, such asphosphorus or arsenic, and/or combinations thereof. In some embodiments,lightly doped source/drain (LDD) regions are formed in the substrate 102prior to the formation of the spacer (e.g., pair of first spacers 110 aand 112 a, pair of second spacers 110 b and 112 b, pair of third spacers110 c and 112 c and pair of fourth spacers 110 d and 112 d), by one ormore implantation processes, such as an ion implantation process.

In some embodiments, an inter-layer dielectric (ILD) layer 106 is formedover the substrate 102. A resulting semiconductor device structure 600Ais obtained as shown in FIG. 6A. In some embodiments, the resultingsemiconductor device structure 600A as shown in FIG. 6A is a usefulintermediary which is connected to other materials for furtherprocessing. The ILD layer 106 is also referred to herein as an ILD0layer. Example materials of the ILD layer 106 include, but are notlimited to, SiNx, SiOx, SiON, SiC, SiBN, SiCBN, or combinations thereof.In at least one embodiment, the ILD layer 106 is formed usinghigh-density plasma (HDP), although other methods such asSub-Atmospheric Pressure Chemical Vapor Deposition (SACVD), LowerPressure Chemical Vapor Deposition (LPCVD), ALD, Plasma enhanced ALD(PEALD), Plasma enhanced CVD (PECVD), Monolayer Deposition (MLD), PlasmaImpulse CVD (PICVD), spin-on, or the like are used in variousembodiments.

In some embodiments, a further ILD layer 602, referred to herein as anILD1 layer, is formed over the ILD layer 106. The ILD layer 602 is alsoreferred to herein as an ILD0 layer. Example materials of the ILD layer602 include, but are not limited to, SiNx, SiOx, SiON, SiC, SiBN, SiCBN,or combinations thereof. In at least one embodiment, the ILD layer 106is formed using HDP, although other methods such as SACVD, LPCVD, ALD,PEALD, PECVD, MLD, PICVD, spin-on, or the like are used in variousembodiments.

In some embodiments, a hard mask layer 604 is deposited over the ILDlayer 602. In some embodiments, the hard mask layer 604 includes siliconnitride, silicon oxynitride, silicon carbide or other suitablematerials. In some embodiments, the hard mask layer 604 is formed, in atleast one embodiment, by a deposition process or any suitable methods,and used as a mask to pattern the first contact features 120, 122 and124 (as shown in FIG. 600E).

In some embodiments, an anti-reflective coating (ARC) layer 606 isdeposited over the hard mask layer 604. In some embodiments, the ARClayer 606 is a bottom ARC (BARC) layer. In some embodiments, the ARClayer 606 includes a single layer or multiple layers. In someembodiments, the ARC layer 606 includes a dielectric material includingan oxide; an organic polymer material, low-k dielectrics; high-kdielectrics; any other suitable material; or combinations thereof. Insome embodiments,the ARC layer 606 is formed using any appropriatemethod, including in this case a spin-on coater or other suitableprocesses.

In some embodiments, a photoresist layer 608 is deposited over the ARClayer 606. In some embodiments, the photoresist layer 608 is used topattern the hard mask layer 604 to define, at least in part, thedimensions of the first contact features 120, 122, and 124. In someembodiments, the photoresist layer 608 and the ARC layer 606 areselectively removed from regions 610 a and 610 b over the top surface ofthe hard mask layer 604. A resulting semiconductor device structure 500Bis obtained as shown in FIG. 5B.

In some embodiments, the remaining ARC layer 606, photoresist layer 608and a portion of the hard mask layer 604 uncovered by both the ARC layer606 and photoresist layer 608 (e.g., regions 610 a and 610 b) areselectively removed, e.g., by a photolithography process followed by anetching process, to expose the underlying first conductive regions 612a, 612 b and 612 c. In some embodiments, the etching process removesportions of the ILD layer 106 located between at least two or more gatestructures (e.g., gate structure 108 a, 108 b, 108 c or 108 d) formingregions 612 b and 612 c. In some embodiments, the etching processremoves portions of the STI region (e.g., isolation structure 104 b)forming region 612 a. The hard mask layer 604 remains over the ILD layer106 and a portion of ILD layer 602 so as not to expose the underlyingILD layer 106 to the etch process. A resulting semiconductor devicestructure 600C is obtained as shown in FIG. 6C. In some embodiments, theresulting semiconductor device structure 600C as shown in FIG. 6C is auseful intermediary which is connected to other materials for furtherprocessing.

At operation 510 of the method 500, a portion 612 d of insulating layer(e.g., insulating layer 114 a, 114 b, 114 c or 114 d) over at least oneof the gate structures (e.g., gate structure 108 a, 108 b, 108 c or 108d) is etched. In some embodiments, in operation 510, a portion 612 d ofinsulating layer (e.g., insulating layer 114 a) over the first gatestructure 108 a is etched (as shown in FIG. 6C).

At operation 512 of the method 500, at least a portion of at least onegate structure (e.g., gate structure 108 a, 108 b, 108 c or 108 d) isetched exposing the remaining portion of the gate structure (e.g., gatestructure 108 a, 108 b, 108 c or 108 d). In some embodiments, inoperation 512, at least a portion of the first gate structure (e.g.,gate structure 108 a) is chemically etched (as shown in FIG. 6D)exposing the remaining portion of the first gate structure (e.g., gatestructure 108 a). In some embodiments, operation 512 is optional. Aresulting semiconductor device structure 600D is obtained as shown inFIG. 6D. In some embodiments, the resulting semiconductor devicestructure 600D as shown in FIG. 6D is a useful intermediary which isconnected to other materials for further processing.

In some embodiments, before forming the first conductive features 120,122 and 124 (e.g., the MD1 layer), a silicidation (e.g., self-alignedsilicidation) process or a suitable method is performed to provide thetop surfaces of the source/drain features (e.g., active region 104 a)with silicided regions 126 as contact features. For example, a metallayer is blanket-deposited over the exposed source/drain features (e.g.,active region 104 a), and then an annealing step is performed to formmetal silicide layers on the source/drain features (e.g., active region104 a). Unreacted metal is subsequently removed, e.g., by a wet chemicaletch.

At operation 514 of the method 500, a first conductive feature 120, 122or 124 (e.g., MD1) is formed over the active region 104 a, or a secondconductive feature 130 (e.g., MP) is formed over a portion 612 d of theetched insulating layer (e.g., insulating layer 114 a, 114 b, 114 c or114 d) to be in direct electrical contact with the active region 104 a.A resulting semiconductor device structure 600E is obtained as shown inFIG. 6E. For example, as shown in FIG. 6E, a conductive material isformed to fill the openings 612 a, 612 b and 612 c, and then planarized,to obtain corresponding first conductive feature 120, 122 or 124 (e.g.,MD1) or second conductive feature 130 (e.g., MP). In some embodiments,the planarizing process comprises, for example, a chemical mechanicalpolish (CMP) process.

In the example configuration illustrated in FIG. 5E, the firstconductive feature 124 extends at least partially into the STI region(e.g., isolating structure 104 b), whereas first conductive features 120and 122 make electrical connection with the corresponding exposedsource/drain features (e.g., active region 104 a). In some embodiments,the first conductive feature 120, 122 or 124 (e.g., MD1) and the secondconductive feature 130 (e.g., MP) are formed of the same conductivematerials. In some embodiments, the first conductive feature 120, 122 or124 (e.g., MD1) and the second conductive feature 130 (e.g., MP) areformed of different conductive materials. In some embodiments, a topsurface of the first conductive feature 120, 122 or 124 (e.g., MD1) issubstantially coplanar with a top surface of the second conductivefeature 130 (e.g., MP). In some embodiments, the first conductivefeature 120, 122 or 124 (e.g., MD1) or the second conductive feature 130(e.g., MP) is formed of Tungsten.

In some embodiments, the second conductive feature 130 is in directelectrical contact with the gate structure 108 a. In some embodiments,the second conductive feature 130 is in direct electrical contact withthe corresponding first conductive feature 120. The illustrations shownin FIG. 5E are exemplary, and the number of second conductive features130 varies. In some embodiments, each second conductive feature 130 iselectrically connected to more than one first conductive feature. Insome embodiments, the top surface of the first conductive feature 120 iscoplanar with the top surface of the second conductive feature 130. Insome embodiments, the second conductive feature 130 has a tapered shape.In some embodiments, the second conductive feature 130 has an L-shape.In some embodiments, the second conductive feature 130 has a U-shape. Insome embodiments, a portion of the second conductive feature 130 isembedded in the first conductive feature 120. In some embodiments, amaterial of the second conductive feature 130 is substantially similarto the material of the first conductive feature 120. In someembodiments, a portion of the second conductive feature 130 is embeddedbetween the first conductive feature 120, the gate structure 108 a andthe pair of first spacers 110 a and 112 a. In some embodiments, thesecond conductive feature 130 is directly on the first spacer 110 a.

In some embodiments, a further ILD layer 134, referred to herein as anILD2 layer, is formed over the planarized first conductive feature 120,122 or 124 (e.g., MD1) or second conductive feature 130 (e.g., MP).Example materials of the ILD layer 134 include, but are not limited to,SiNx, SiOx, SiON, SiC, SiBN, SiCBN, or combinations thereof. In at leastone embodiment, the ILD layer 134 is formed using HDP, although othermethods such as SACVD, LPCVD, ALD, PEALD, PECVD, MLD, PICVD, spin-on, orthe like are used in various embodiments. In some embodiments, a hardmask layer (not shown) is formed over the ILD layer 134. In someembodiments, contact openings are formed in the ILD layer 134 by anetching process to expose underlying first conductive feature 120, 122or 124 (e.g., MD1) or second conductive feature 130 (e.g., MP).

At operation 516 of the method 500, third conductive feature 132 (e.g.,MD2) is formed over the first conductive feature 120, 122 or 124 (e.g.,MD1) or second conductive feature 130 (e.g., MP). In some embodiments,the third conductive feature 132 is formed over the gate structures(e.g., first gate structure 108 a or second gate structure 108 b). Aconductive material is formed to fill the contact openings, to obtainthird conductive feature 132 (e.g., MD2). A resulting semiconductordevice structure 600F is obtained as shown in FIG. 6F.

In some embodiments, the first conductive feature 120, 122 or 124 (e.g.,MD1) and the third conductive feature 132 (e.g., MD2) are formed ofdifferent conductive materials. In some embodiments, the firstconductive feature 120, 122 or 124 (e.g., MD1) and the third conductivefeature 132 (e.g., MD2) are formed of the same conductive material. Insome embodiments, the first conductive feature 120, 122 or 124 (e.g.,MD1) and the third conductive feature 132 (e.g., MD2) are formed oftungsten. In some embodiments, the formation of at least one of thefirst conductive feature 120, 122 or 124 (e.g., MD1) or the thirdconductive feature 132 (e.g., MD2) includes depositing a glue (or seed)metal layer before filling the corresponding conductive material(s) inthe corresponding openings.

The above method(s) include(s) example operations, but the operations insome embodiments are not performed in the order shown. Operations may beadded, replaced, changed order, and/or eliminated as appropriate, inaccordance with the spirit and scope of embodiments of the disclosure.Embodiments that combine different features and/or different embodimentsare within the scope of the disclosure and will be apparent to those ofordinary skill in the art after reviewing this disclosure.

In summary, one or more embodiments implement at least a part of anelectrical connection between elements of a semiconductor device in theMO layer. In some embodiments, the second conductive feature (e.g.,second conductive feature 130, 230 or 330) is configured to provide alarger contact area to one or more connected gate structures (e.g., gatestructure 108 a, 108 b, 108 c or 108 d) when compared with similarconductive features positioned above the gate structure (and locatedabove the first contact feature MD1). In some embodiments, secondconductive feature 130 (e.g., MP) is arranged to extend across activeregion 104 a. In some embodiments, second conductive feature 130 (e.g.,MP) is arranged to extend across one or more isolation regions (e.g.,isolation structure 104 b or 204). In some embodiments, third conductivefeature 132 (e.g., MD2) is arranged to extend across one or moreisolation regions (e.g., isolation structure 104 b or 204). In someembodiments, third conductive feature 132 (e.g., MD2) is arranged toextend across active regions 104 a. In some embodiments, thirdconductive feature 132 (e.g., MD2) is arranged to extend over activeregion 104 a without being electrically connected to one or more gatestructures (e.g., gate structure 108 a, 108 b, 108 c or 108 d). As aresult, one or more of manufacturing time, manufacturing cost,manufacturing material, and size of the semiconductor device is/arereduced compared to the other approaches.

In some embodiments, a semiconductor device includes a substrate havingan active region, a first gate structure over a top surface of thesubstrate, a second gate structure over the top surface of thesubstrate, a pair of first spacers on each sidewall of the first gatestructure, a pair of second spacers on each sidewall of the second gatestructure, an insulating layer over at least the first gate structure, afirst conductive feature over the active region and a second conductivefeature over the substrate. Further, the second gate structure isadjacent to the first gate structure and a top surface of the firstconductive feature is coplanar with a top surface of the secondconductive feature.

In some embodiments, an integrated circuit comprising a substratecomprising a source feature, and a drain feature, a first gate structureover a top surface of the substrate, wherein the first gate structure isbetween the source feature and the drain feature, a second gatestructure over the top surface of the substrate, wherein the second gatestructure is adjacent to the first gate structure and the sourcefeature, a pair of first spacers on each sidewall of the first gatestructure, a pair of second spacers on each sidewall of the second gatestructure, an insulating layer over at least the first gate structure, afirst conductive feature over the source feature or the drain feature,wherein a top surface of the first conductive feature is coplanar with atop surface of the insulating layer, a second conductive feature overthe substrate, and a third conductive feature, wherein the thirdconductive feature is over the first conductive feature or the secondconductive feature.

In a method of manufacturing a semiconductor device in accordance withsome embodiments, the method comprising forming an active region in asubstrate, forming a first gate structure and a second gate structure ona substrate, wherein the second gate structure is adjacent to the firstgate structure, forming an insulating layer on the first gate structureand the second gate structure, forming a pair of first spacers on eachsidewall of the first gate structure, forming a pair of second spacerson each sidewall of the second gate structure and forming a firstconductive feature over the active region.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: forming an active region ina substrate; forming a first gate structure and a second gate structureon the substrate, wherein the second gate structure is adjacent to thefirst gate structure; forming an insulating layer on the first gatestructure and the second gate structure; forming a pair of first spacerson each sidewall of the first gate structure; forming a pair of secondspacers on sidewalls of the second gate structure; forming a firstconductive feature over the active region; etching a portion of theinsulating layer over the first gate structure; etching a portion of thefirst gate structure; and depositing a second conductive feature over atleast the first gate structure, wherein a portion of a top surface ofthe second conductive feature is coplanar with a top surface of theinsulating layer remaining over the second gate structure.
 2. The methodof claim 1 further comprising: forming a third conductive feature overthe substrate, wherein a top surface of the first conductive feature iscoplanar with a top surface of the third conductive feature.
 3. Themethod of claim 2 further comprising: forming a fourth conductivefeature, wherein the fourth conductive feature is over the first gatestructure or the second gate structure.
 4. The method of claim 3,wherein the second conductive feature electrically couples the firstgate structure to the first conductive feature.
 5. The method of claim2, wherein the second conductive feature has an L-shape or a U-shape. 6.The method of claim 2, wherein a portion of the second conductivefeature is embedded in the first conductive feature.
 7. The method ofclaim 2, wherein the second conductive feature is partially embedded inboth the first conductive feature and the third conductive feature. 8.The method of claim 7, wherein the second conductive feature has abottommost surface lower than a topmost surface of the first gatestructure.
 9. The method of claim 2 further comprising: forming a powerrail on the substrate, the first conductive feature extending over thepower rail.
 10. The method of claim 9, wherein the third conductivefeature does not extend over the power rail.
 11. The method of claim 1,wherein the first conductive feature has a tapered shape.
 12. The methodof claim 1 further comprising: forming a dielectric layer over thesecond conductive feature and the insulating layer over the first gatestructure.
 13. A method comprising: forming a first active region in asubstrate; forming a second active region in the substrate, the secondactive region being spaced apart from the first active region; forming afirst gate structure over the first and second active regions; forming asecond gate structure over the first and second active regions; forminga first source/drain region and a second source/drain region in thefirst active region on opposing sides of the first gate structure;forming a first conductive contact connected to the first source/drainregion; forming a second conductive contact connected to the secondsource/drain region; and forming a first conductive feature over andconnected to the first and second conductive contacts, the firstconductive feature extending over the second active region.
 14. Themethod of claim 13 further comprising: forming a first insulating layerover the first gate structure, the first insulating layer beinginterposed between the first gate structure and the first conductivefeature.
 15. The method of claim 14 further comprising forming a firstset of gate spacers on opposing sides of the first gate structure, thefirst set of gate spacers being between the first gate structure and thefirst and second conductive contacts.
 16. The method of claim 15,wherein the first pair of gate spacers contact the first conductivefeature.
 17. A method comprising: forming a first active region in asubstrate; forming a first gate structure over the first active region;forming a first insulating layer over the first gate structure; forminga second gate structure over the first active region; forming a secondinsulating layer over the second gate structure; forming a firstsource/drain region and a second source/drain region in the first activeregion on opposing sides of the first gate structure; forming a firstconductive contact electrically connected to the first source/drainregion; forming a second conductive contact electrically connected tothe second source/drain region; and etching a first opening in thesecond insulating layer and the second gate structure; and forming afirst conductive feature in the first opening, the first conductivefeature being electrically connected to the first conductive contact andthe second gate structure.
 18. The method of claim 17 furthercomprising: forming a power rail on the substrate, the power rail beingspaced apart from the first active region, the first conductive contactextending over the first active region and the power rail.
 19. Themethod of claim 17 further comprising: forming a dielectric layer overthe first conductive feature and the second insulating layer.
 20. Themethod of claim 19 further comprising: forming a first spacer on asidewall of the second gate structure, the first spacer contacting thedielectric layer.